| PART |
Description |
Maker |
| 2N7002TL-AN3-R 2N7002TG-AN3-R |
300 mAmps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MMBF2201NT1 MMBF2201NT1-D MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ON Semiconductor
|
| MMBF2201NT1G MMBF2201NT106 MMBF2201NT1 |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
| MMBF0201NLT106 MMBF0201NLT1G MMBF0201NLT1 |
Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23
|
ONSEMI[ON Semiconductor]
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138WT1G |
Power MOSFET 200 mAmps, 50 Volts
|
Leshan Radio Company
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MGSF1N02LT105 MGSF1N02LT3G MGSF1N02LT1 MGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ONSEMI[ON Semiconductor]
|
